PART |
Description |
Maker |
KDR357 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
KDR393S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
CBS05F30 CBS05F30-14 |
Schottky Barrier Diode Silicon Epitaxial Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
CBS10S30 |
Schottky Barrier Diode Silicon Epitaxial Small-signal Schottky barrier diode
|
Toshiba Semiconductor
|
KDR331E |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
FMJ-23L |
10A Schottky barrier diode in TO220F package Schottky Barrier Diode - 30V
|
http:// Sanken Electric Co.,Ltd. SANKEN[Sanken electric]
|
KDR331 |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(HIGH SPEED SWITCHING)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
5082-2351 50822351 |
MEDIUM BARRIER SCHOTTKY DIODE SILICON, MEDIUM BARRIER SCHOTTKY, VHF-UHF BAND, MIXER DIODE From old datasheet system
|
Advanced Semiconductor, Inc.
|
NTHD3133PF NTHD3133PFT1G NTHD3133PFT3G |
-20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET Power MOSFET and Schottky Diode -20 V, FETKY, P-Channel, -4.4 A, with 3.7 A Schottky Barrier Diode, ChipFET垄芒
|
ON Semiconductor
|
KDR721S |
Schottky Barrier Diode SCHOTTKY BARRIER TYPE DIODE(CATHODE COMMAND)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
CDBQR0140R-HF12 CDBQR0140R-HF |
Halogen Free Schottky Barrier Diodes, V-RRM=45V, V-R=40V, I-O=0.1A SMD Schottky Barrier Diode
|
Comchip Technology
|
HSB88WA |
Schottky Barrier Diodes for Detection and Mixer SILICON SCHOTTKY BARRIER DIODE FOR HIGH SPEED SWITCHING
|
HITACHI[Hitachi Semiconductor]
|